An Extensive Evaluation of Futuristic Gate All Around Junctionless Nanowire MOSFET Using Numerical Simulation
نویسندگان
چکیده
This paper present an extensive review of homogeneously doped Junctionless Cylindrical Gate All Around (JL-CGAA) MOSFET using numerical simulations to look into deep physical insight of the device. The electrical and analog/RF performance has been investigated. The JL-C-GAA FET is more immune to short channel effect than the devices having p-n junctions. It also offers steeper subthreshold slope than the inversion mode MOSFET. Device physics and band diagrams are also described in this paper as it has different principle of working from conventional MOSFET device having junctions. Atlas3D device simulation tool has been used for the numerical simulations.
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